Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

Thin layer MoS2-based field effect transistors (FET) are emerging candidates to fabricate very fast and sensitive devices. Here, we demonstrate a method to fabricate very narrow transistor channel widths on a single layer MoS2 flake connected to gold electrodes. Oxidation scanning probe lithography is applied to pattern insulating barriers on the flake. The process narrows the electron path to about 200 nm. The output and transfer characteristics of the fabricated FET show a behavior that is consistent with the minimum channel width of the device. The method relies on the direct and local chemical modification of MoS2. The straightforward character and the lack of specific requirements envisage the controlled patterning of sub-100 nm electron channels in MoS2 FETs.This work was funded by the European Union FP7/2007-2013 under Grant Agreement No. 318804 (SNM), the Ministerio de Economía y Competitividad (Spain) under Grant No. MAT2013-44858-R, the Marie Curie ITN network “MoWSeS” (Grant No. 317451) and the Swiss SNF Sinergia Grant No. 147607.Peer Reviewe