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MEMSCompany
MEMS devices are becoming a pervasive part of today\u27s technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters
The possibilities and limitations of micro Raman spectroscopy (muRS), convergent beam electron diffr...
Stress measurements by Raman spectroscopy have been performed on microelectronic devices. Strain-ind...
© 2007 American Institute of Physics. The electronic version of this article is the complete one and...
MEMS devices are becoming a pervasive part of today\u27s technology world. Currently, MEMS designers...
In this research, micro-Raman spectroscopy is employed to examine, and characterize the residual str...
Residual stresses im MEMS devices are one of the crucial reliability issues, because they are inhere...
Micromachining can result in residual stress in a wafer. This paper puts forward an online measuring...
Three different methods of stress measurement with strong spatial resolution are presented. They bas...
Three different methods of stress measurement with strong spatial resolution are presented. They bas...
The uncooled infrared focal plane arrays（ UIRFPA） used in this micro-Raman experiment are composed o...
Local mechanical stresses in semiconductor devices, introduced e.g. by dicing, are an important manu...
This paper reports on utilizing Raman spectroscopy to characterize the motion and measure strain lev...
Micron-scale characterization of mechanical stresses is essential for the successful design and oper...
International audienceThe unique versatility of micro-Raman spectroscopy (μRS) in semicon- ductor ph...
Stress in silicon structures plays an essential role in modern semiconductor technology. This stress...
The possibilities and limitations of micro Raman spectroscopy (muRS), convergent beam electron diffr...
Stress measurements by Raman spectroscopy have been performed on microelectronic devices. Strain-ind...
© 2007 American Institute of Physics. The electronic version of this article is the complete one and...
MEMS devices are becoming a pervasive part of today\u27s technology world. Currently, MEMS designers...
In this research, micro-Raman spectroscopy is employed to examine, and characterize the residual str...
Residual stresses im MEMS devices are one of the crucial reliability issues, because they are inhere...
Micromachining can result in residual stress in a wafer. This paper puts forward an online measuring...
Three different methods of stress measurement with strong spatial resolution are presented. They bas...
Three different methods of stress measurement with strong spatial resolution are presented. They bas...
The uncooled infrared focal plane arrays（ UIRFPA） used in this micro-Raman experiment are composed o...
Local mechanical stresses in semiconductor devices, introduced e.g. by dicing, are an important manu...
This paper reports on utilizing Raman spectroscopy to characterize the motion and measure strain lev...
Micron-scale characterization of mechanical stresses is essential for the successful design and oper...
International audienceThe unique versatility of micro-Raman spectroscopy (μRS) in semicon- ductor ph...
Stress in silicon structures plays an essential role in modern semiconductor technology. This stress...
The possibilities and limitations of micro Raman spectroscopy (muRS), convergent beam electron diffr...
Stress measurements by Raman spectroscopy have been performed on microelectronic devices. Strain-ind...
© 2007 American Institute of Physics. The electronic version of this article is the complete one and...
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