The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.Peer reviewe
In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of grap...
The full exploration of the potential, which graphene offers to nanoelectronics requires its integra...
In-plane patched and vertically stacked heterostructures of graphene and hexagonal boron nitride(h-B...
The combination of several materials into heterostructures is a powerful method for controlling mate...
The atomic layer of hybridized, hexagonal boron nitride (h-BN) and graphene has attracted a great de...
Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many pote...
The atomic layer of hybridized hexagonal boron nitride (h-BN) and graphene has attracted a great dea...
Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride...
Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated, whil...
Transferring graphene flakes onto hexagonal boron nitride (h-BN) has become a common approach for fa...
The ability to control the formation of interfaces between different materials has become one of the...
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight c...
With the growing 2D materials family, the combination of the semi-metal graphene, insulator hexagona...
It is shown that on Pt(111) it is possible to prepare hexagonal boron nitride (h -BN) and graphene (...
Abstract. The field of graphene research has developed rapidly since its first isolation by mechanic...
In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of grap...
The full exploration of the potential, which graphene offers to nanoelectronics requires its integra...
In-plane patched and vertically stacked heterostructures of graphene and hexagonal boron nitride(h-B...
The combination of several materials into heterostructures is a powerful method for controlling mate...
The atomic layer of hybridized, hexagonal boron nitride (h-BN) and graphene has attracted a great de...
Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many pote...
The atomic layer of hybridized hexagonal boron nitride (h-BN) and graphene has attracted a great dea...
Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride...
Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated, whil...
Transferring graphene flakes onto hexagonal boron nitride (h-BN) has become a common approach for fa...
The ability to control the formation of interfaces between different materials has become one of the...
We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight c...
With the growing 2D materials family, the combination of the semi-metal graphene, insulator hexagona...
It is shown that on Pt(111) it is possible to prepare hexagonal boron nitride (h -BN) and graphene (...
Abstract. The field of graphene research has developed rapidly since its first isolation by mechanic...
In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of grap...
The full exploration of the potential, which graphene offers to nanoelectronics requires its integra...
In-plane patched and vertically stacked heterostructures of graphene and hexagonal boron nitride(h-B...