We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.Peer reviewe
Everybody working in photonics has the perception that the natural substrate for integrated devices ...
Everybody working in photonics has the perception that the natural substrate for integrated devices ...
Dielectric membranes with exceptional mechanical and optical properties present one of the most prom...
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silico...
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silico...
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silico...
A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sen...
Bi-axially strained Germanium (Ge) is an ideal material for Silicon (Si) compatible light sources, o...
The introduction of strain into semiconductors offers a well-known route to modify their band struct...
In this paper we describe a general method to avoid stress-induced buckling of thin and large freest...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate s...
Everybody working in photonics has the perception that the natural substrate for integrated devices ...
Everybody working in photonics has the perception that the natural substrate for integrated devices ...
Dielectric membranes with exceptional mechanical and optical properties present one of the most prom...
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silico...
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silico...
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silico...
A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sen...
Bi-axially strained Germanium (Ge) is an ideal material for Silicon (Si) compatible light sources, o...
The introduction of strain into semiconductors offers a well-known route to modify their band struct...
In this paper we describe a general method to avoid stress-induced buckling of thin and large freest...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used t...
We deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate s...
Everybody working in photonics has the perception that the natural substrate for integrated devices ...
Everybody working in photonics has the perception that the natural substrate for integrated devices ...
Dielectric membranes with exceptional mechanical and optical properties present one of the most prom...