Facet Growth of 4He Crystals at mK Temperatures

We have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0–20 cm exp −2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected.Peer reviewe