A general kinetic model based on accurate density-functional-theoretic total-energy calculations is introduced to describe the aggregation kinetics of oxygen-related thermal double donors (TDD's) in silicon. The calculated kinetics, which incorporates the reactions of associations, dissociations, and isomerizations of all relevant oxygen complexes, is in agreement with experimental annealing studies. The aggregation of TDD's takes place through parallel-consecutive reactions where both mobile oxygen dimers and fast migrating chainlike TDD's capture interstitial oxygen atoms.Peer reviewe
We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing mono...
The kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a sim...
Thesis (Ph.D.)--University of Washington, 2013The demand for ever smaller, higher-performance integr...
The formation kinetics of thermal double donors (TDD’s) is studied by a general kinetic model with p...
Accurate total-energy calculations are used to study the structures and formation energies of oxygen...
Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theor...
The electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TD...
The local vibrational modes (LVM’s) of the oxygen chains assigned to thermal double donors (TDD’s) a...
A model for the kinetic growth of oxygen-related thermal donors in Czochralski silicon at about 450...
First-principles methods are used to calculate the structures and local vibrational modes of interst...
The formation and binding energies, the ionization levels, the structures, and the local vibrations ...
We study enhanced/retarded diffusion of oxygen in doped silicon by means of first principle calculat...
The thermodynamic integration method has been incorporated into the tight-binding molecular-dynamics...
We have performed density functional calculations of oxygen incorporation and diffusion in monoclini...
A new thermal oxidation model based on a rate equation approach with concentration dependent diffusi...
We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing mono...
The kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a sim...
Thesis (Ph.D.)--University of Washington, 2013The demand for ever smaller, higher-performance integr...
The formation kinetics of thermal double donors (TDD’s) is studied by a general kinetic model with p...
Accurate total-energy calculations are used to study the structures and formation energies of oxygen...
Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theor...
The electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TD...
The local vibrational modes (LVM’s) of the oxygen chains assigned to thermal double donors (TDD’s) a...
A model for the kinetic growth of oxygen-related thermal donors in Czochralski silicon at about 450...
First-principles methods are used to calculate the structures and local vibrational modes of interst...
The formation and binding energies, the ionization levels, the structures, and the local vibrations ...
We study enhanced/retarded diffusion of oxygen in doped silicon by means of first principle calculat...
The thermodynamic integration method has been incorporated into the tight-binding molecular-dynamics...
We have performed density functional calculations of oxygen incorporation and diffusion in monoclini...
A new thermal oxidation model based on a rate equation approach with concentration dependent diffusi...
We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing mono...
The kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a sim...
Thesis (Ph.D.)--University of Washington, 2013The demand for ever smaller, higher-performance integr...