Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×10 exp 14 cm exp −2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100 K. This is identified as the positron lifetime in a germanium monovacancy. Annealing experiments in the temperature interval 35–300 K reveal two annealing stages. The first at 100 K is tentatively associated with the annealing of the Frenkel pair, the second at 200 K with the annealing of the monovacancy. Above 200 K it is observed that mobile neutral monovacancies form divacancies, with a positron lifetime of 315 ps.Peer reviewe
A theory for calculating the momentum distribution of annihilating positron-electron pairs in solids...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
In the present article we employ positron annihilation lifetime spectroscopy and secondary ion mass ...
Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×10 exp 14 cm exp...
We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation,...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
Thermal evolution of vacancy complexes was studied in P-doped ([P]=10 exp 18 cm exp −3) proton irrad...
Irradiation damage and its evolution in noble gas ion-irradiated tungsten have not been investigated...
Positron-lifetime measurements in electron-irradiated pure Nb and Ta show that monovacancy migration...
We have found evidence of a second acceptor state of the E center in Si1-x Gex by using positron ann...
We report a computational first-principles study of positron trapping at vacancy defects in metals a...
Positron annihilation measurements, supported by first-principles electron-structure calculations, i...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermi’s golden-rule ca...
We have measured positron lifetime and Doppler broadening in highly As-doped silicon containing ther...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
A theory for calculating the momentum distribution of annihilating positron-electron pairs in solids...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
In the present article we employ positron annihilation lifetime spectroscopy and secondary ion mass ...
Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×10 exp 14 cm exp...
We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation,...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
Thermal evolution of vacancy complexes was studied in P-doped ([P]=10 exp 18 cm exp −3) proton irrad...
Irradiation damage and its evolution in noble gas ion-irradiated tungsten have not been investigated...
Positron-lifetime measurements in electron-irradiated pure Nb and Ta show that monovacancy migration...
We have found evidence of a second acceptor state of the E center in Si1-x Gex by using positron ann...
We report a computational first-principles study of positron trapping at vacancy defects in metals a...
Positron annihilation measurements, supported by first-principles electron-structure calculations, i...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermi’s golden-rule ca...
We have measured positron lifetime and Doppler broadening in highly As-doped silicon containing ther...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
A theory for calculating the momentum distribution of annihilating positron-electron pairs in solids...
Positron states at pure monovacancies and divacancies and vacancy-phosphorus pairs in Si as well as ...
In the present article we employ positron annihilation lifetime spectroscopy and secondary ion mass ...