We present results of an extensive theoretical study of the nitrogen antisite in GaN. The neutral antisite in c-GaN is reported to exhibit metastable behavior similar to the arsenic antisite in GaAs. The feature of interest is the existence of the negative charge states of the nitrogen antisite. Their stability is a consequence of the large band gap. The nitrogen antisite undergoes in the negative charge states a large spontaneous Jahn-Teller displacement in the [111] direction, both in the cubic and in the wurtzite phase. The connection between the nitrogen antisite and the yellow luminescence commonly observed in GaN is discussedPeer reviewe
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Semiconductors are an essential part of the modern society. Transistors, solid- state lasers, solar ...
We present results of ab initio calculations for vacancies and divacancies in GaN. Particular attent...
The properties of defect complexes consisting of a nitrogen vacancy with a substitutional beryllium ...
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reprod...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
The properties of several point defects in hexagonal gallium nitride that can compensate beryllium s...
We have employed the plane-wave pseudopotential method to study point defect complexes in GaN and Al...
Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functio...
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reprod...
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV...
We present the studies of magnetic properties of 2MeV4He+-irradiated GaN grown by metal-organic chem...
Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor ...
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found t...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Semiconductors are an essential part of the modern society. Transistors, solid- state lasers, solar ...
We present results of ab initio calculations for vacancies and divacancies in GaN. Particular attent...
The properties of defect complexes consisting of a nitrogen vacancy with a substitutional beryllium ...
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reprod...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
The properties of several point defects in hexagonal gallium nitride that can compensate beryllium s...
We have employed the plane-wave pseudopotential method to study point defect complexes in GaN and Al...
Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functio...
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reprod...
The dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV...
We present the studies of magnetic properties of 2MeV4He+-irradiated GaN grown by metal-organic chem...
Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor ...
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found t...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Semiconductors are an essential part of the modern society. Transistors, solid- state lasers, solar ...