The native defects in GaSb have been studied with first-principles total-energy calculations. We report the structures and the formation energies of the stable defects and estimate the defect concentrations under different growth conditions. The most important native defect is the GaSb antisite, which acts as an acceptor. The other important defects are the acceptor-type Ga vacancy and the donor-type Ga interstitial. The Sb vacancies and interstitials are found to have much higher formation energies. A metastable state is observed for the SbGa antisite. The significantly larger concentrations of the Ga vacancies and interstitials compared to the corresponding Sb defects is in accordance with the asymmetric self-diffusion behavior in GaSb. T...
The presence of defects in the narrow gap semiconductors GaSb and InSb affects their dopability and ...
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found t...
In this comprehensive and detailed study, vacancy-mediated self-diffusion of A- and B-elements in tr...
The native defects in GaSb have been studied with first-principles total-energy calculations. We rep...
Early experiments have determined that the gallium and antimony diffusivities in gallium antimonide ...
We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type ...
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is u...
We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acc...
Self-diffusion along the [112] Shockley parital dislocation pair (self-pipe-diffusion) in Au is stud...
The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as th...
The technological age has in large part been driven by the applications of semiconductors, and most ...
The energetics of native point defects in GaSb is studied using the density-functional theory within...
We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga...
This Letter solves the long-standing puzzle [Phys. Rev. Lett. 79, 693 (1997)] of why GaSb(001) appar...
Native vacancies in Te-doped (5×1016–5×1018cm−3) GaAs were investigated by means of positron lifetim...
The presence of defects in the narrow gap semiconductors GaSb and InSb affects their dopability and ...
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found t...
In this comprehensive and detailed study, vacancy-mediated self-diffusion of A- and B-elements in tr...
The native defects in GaSb have been studied with first-principles total-energy calculations. We rep...
Early experiments have determined that the gallium and antimony diffusivities in gallium antimonide ...
We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type ...
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is u...
We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acc...
Self-diffusion along the [112] Shockley parital dislocation pair (self-pipe-diffusion) in Au is stud...
The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as th...
The technological age has in large part been driven by the applications of semiconductors, and most ...
The energetics of native point defects in GaSb is studied using the density-functional theory within...
We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga...
This Letter solves the long-standing puzzle [Phys. Rev. Lett. 79, 693 (1997)] of why GaSb(001) appar...
Native vacancies in Te-doped (5×1016–5×1018cm−3) GaAs were investigated by means of positron lifetim...
The presence of defects in the narrow gap semiconductors GaSb and InSb affects their dopability and ...
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found t...
In this comprehensive and detailed study, vacancy-mediated self-diffusion of A- and B-elements in tr...