The wide scatter in experimental results has not allowed drawing solid conclusions on self-diffusion in the chalcopyrite CuInSe2 (CIS). In this work, the defect-assisted mass transport mechanisms operating in CIS are clarified using first-principles calculations. We present how the stoichiometry of the material and temperature affect the dominant diffusion mechanisms. The most mobile species in CIS is shown to be copper, whose migration proceeds either via copper vacancies or interstitials. Both of these mass-mediating agents exist in the material abundantly and face rather low migration barriers (1.09 and 0.20 eV, respectively). Depending on chemical conditions, selenium mass transport relies either solely on selenium dumbbells, which diff...
CuInAl metallic precursor films were selenised at different temperatures and the migration of the el...
The electronic properties of high-efficiency CuInSe2 (CIS)-based solar cells are affected by the mic...
AbstractNumerical modeling of chalcopyrite (CuInSe2) absorber layer formation by rapid thermal annea...
The wide scatter in experimental results has not allowed drawing solid conclusions on self-diffusion...
Density-functional-theory calculations have often been used to interpret experimental observations o...
Formation enthalpies and migration barriers of copper interstitials and Frenkel pairs in CuInSe₂ (CI...
The presence of small amounts of sodium has been shown to improve the electronic performance of Cu(I...
We have employed first-principles static and molecular dynamics (MD) calculations with semilocal and...
Formation enthalpies and migration barriers of copper interstitials and Frenkel pairs in CuInSe2 (CI...
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2thin films...
Significant structural evolution occurs during the deposition of CuInSe2 solar materials when the Cu...
We have studied the geometries, formation energies, migration barriers and diffusion of a copper int...
The concentration of native point defects in CuInSe2powder material as a function of stoichiometry h...
Formation enthalpies and migration barriers of the copper vacancy in CuInSe2, CuGaSe2(2), CuInS2, an...
Point defects and complexes may affect significantly physical, optical, and electrical properties of...
CuInAl metallic precursor films were selenised at different temperatures and the migration of the el...
The electronic properties of high-efficiency CuInSe2 (CIS)-based solar cells are affected by the mic...
AbstractNumerical modeling of chalcopyrite (CuInSe2) absorber layer formation by rapid thermal annea...
The wide scatter in experimental results has not allowed drawing solid conclusions on self-diffusion...
Density-functional-theory calculations have often been used to interpret experimental observations o...
Formation enthalpies and migration barriers of copper interstitials and Frenkel pairs in CuInSe₂ (CI...
The presence of small amounts of sodium has been shown to improve the electronic performance of Cu(I...
We have employed first-principles static and molecular dynamics (MD) calculations with semilocal and...
Formation enthalpies and migration barriers of copper interstitials and Frenkel pairs in CuInSe2 (CI...
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2thin films...
Significant structural evolution occurs during the deposition of CuInSe2 solar materials when the Cu...
We have studied the geometries, formation energies, migration barriers and diffusion of a copper int...
The concentration of native point defects in CuInSe2powder material as a function of stoichiometry h...
Formation enthalpies and migration barriers of the copper vacancy in CuInSe2, CuGaSe2(2), CuInS2, an...
Point defects and complexes may affect significantly physical, optical, and electrical properties of...
CuInAl metallic precursor films were selenised at different temperatures and the migration of the el...
The electronic properties of high-efficiency CuInSe2 (CIS)-based solar cells are affected by the mic...
AbstractNumerical modeling of chalcopyrite (CuInSe2) absorber layer formation by rapid thermal annea...