Add to ORKGSilicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one of its ports connected to the energy storage element (Lithium-Ion battery), is tested and analyzed. By swapping the switching frequency of the device, a significant efficiency improvement can be observed by SiC power devices. Experimental results indicated that an efficiency increment of around 2% can be brought by SiC MOSFET. Moreover, the batte...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...
Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, a...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
The charging process is one of the main factors for the widespread dissemination of electric mobilit...
Silicon-based MOSFETs and IGBTs have long been the premiere options for semiconductor switches in po...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potentia...
This paper presents the assembly and characterization of an integrated all SiC 3-to-1 phases matrix ...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...
Due to its superior electrical characteristics resultant from material properties such as high criti...
In the scenario of a more and more sustainable society, an increasing electrification in different f...
Space and weight are critical factors for offshore wind applications during the construction, operat...
Compact high-efficiency power converters is a hot topic in electrical power engineering. So is also ...
This paper presents an innovative device packaging and system integration approach aimed at optimizi...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...
Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, a...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
The charging process is one of the main factors for the widespread dissemination of electric mobilit...
Silicon-based MOSFETs and IGBTs have long been the premiere options for semiconductor switches in po...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potentia...
This paper presents the assembly and characterization of an integrated all SiC 3-to-1 phases matrix ...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...
Due to its superior electrical characteristics resultant from material properties such as high criti...
In the scenario of a more and more sustainable society, an increasing electrification in different f...
Space and weight are critical factors for offshore wind applications during the construction, operat...
Compact high-efficiency power converters is a hot topic in electrical power engineering. So is also ...
This paper presents an innovative device packaging and system integration approach aimed at optimizi...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
The advantages that silicon carbide (SiC) based power electronic devices offer are being realized by...
The unique properties of SiC devices enable substantial improvement of existing power conversion sys...