In this thesis, the growth of metal-free naphthalocyanine (Nc) and copper naphthalocyanine (CuNc) on both bare Si/SiO2 and octadecyltrichlorosilane (OTS) modified Si/SiO2 surface were studied. The effects of the substrate temperature on morphology and structure of Nc and CuNc thin film growth were presented. For these purposes thin films of Nc and CuNc prepared by thermal vacuum evaporation were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD). We observed that the increase of substrate temperature during growth affects the morphology, preferential molecular orientation and degree of crystallinity of both Nc and CuNc thin film, which were used as active layers in organic field effect transistor (OFET) devices. Organic...
Interfaces between metals and organic thin films are of paramount importance for organic electronic ...
The design of organic electronic devices is heavily dependent upon the orientation of the molecular ...
Copper phthalocyanine (CuPc) films have been prepared on SiO<sub>2</sub> and octadecyltrichlorosilan...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Electronic devices based on organic materials have recently become an emerging technology for many a...
Electronic devices based on organic materials have recently become an emerging technology for many a...
The development and utilisation of phthalocyanine (Pc) materials for practical applications has bee...
Small-molecule layers for devices- Evaporation growth and characterization of thin filmsM\ue5ns Andr...
Small-molecule layers for devices - Evaporation growth and characterization of thin films Måns Andr...
The device performance of organic thin-film transistors (OTFTs) employing the solution processed fil...
Bottom-gate, bottom-contact organic thin film transistors (OTFTs) were fabricated using solvent solu...
Organic semiconductor interfaces are promising materials for use in next-generation electronic and o...
Interfaces between metals and organic thin films are of paramount importance for organic electronic ...
The design of organic electronic devices is heavily dependent upon the orientation of the molecular ...
Copper phthalocyanine (CuPc) films have been prepared on SiO<sub>2</sub> and octadecyltrichlorosilan...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Naphthalocyanine (Nc) thin films have been grown by sublimation on SiO2. We have used atomic force m...
Electronic devices based on organic materials have recently become an emerging technology for many a...
Electronic devices based on organic materials have recently become an emerging technology for many a...
The development and utilisation of phthalocyanine (Pc) materials for practical applications has bee...
Small-molecule layers for devices- Evaporation growth and characterization of thin filmsM\ue5ns Andr...
Small-molecule layers for devices - Evaporation growth and characterization of thin films Måns Andr...
The device performance of organic thin-film transistors (OTFTs) employing the solution processed fil...
Bottom-gate, bottom-contact organic thin film transistors (OTFTs) were fabricated using solvent solu...
Organic semiconductor interfaces are promising materials for use in next-generation electronic and o...
Interfaces between metals and organic thin films are of paramount importance for organic electronic ...
The design of organic electronic devices is heavily dependent upon the orientation of the molecular ...
Copper phthalocyanine (CuPc) films have been prepared on SiO<sub>2</sub> and octadecyltrichlorosilan...