Add to ORKGField-effect transistors, with their high impedance and low noise, can effectively measure very low currents. To bring the FET up to electrometer standards (so that it can measure currents of, say, 10 (sup -13) amp) the designer must know where the noise is and what to do about it
We have designed and built a very simple and efficient instrument that allows performing very accura...
Noise specifications for junction field-effect transistors are presented in different ways depending...
In modern submicrometer transistors, the influence of the internal base and emitter series resistanc...
In this paper, we show and validate a reliable circuit design technique based on source voltage shif...
This paper deals with the measurement of low values of electrical voltages and currents from sources...
Nanowire tunnel field-effect transistors (TFETs) were investigated by carrying out noise measurement...
Low noise devices are required whenever dealing with low signal power detection. The junction field ...
Scientists and engineers are often confronted with the problem of detecting the presence of signal l...
Abstract We describe a method to measure the gate capacitance and the gate current of transistors ...
A iow-noise, CCD electrometer is presented that makes use of devices akin to buried-channel, LDD NMO...
Minimizing electrical noise is an increasingly important topic. New systems and modulation technique...
The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was bu...
The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxid...
In this paper we examine the impact of deep sub-micron CMOS technology on analog circuit design with...
AbstractRecording systems in neurophysiological research have to deal with high sensor impedances of...
We have designed and built a very simple and efficient instrument that allows performing very accura...
Noise specifications for junction field-effect transistors are presented in different ways depending...
In modern submicrometer transistors, the influence of the internal base and emitter series resistanc...
In this paper, we show and validate a reliable circuit design technique based on source voltage shif...
This paper deals with the measurement of low values of electrical voltages and currents from sources...
Nanowire tunnel field-effect transistors (TFETs) were investigated by carrying out noise measurement...
Low noise devices are required whenever dealing with low signal power detection. The junction field ...
Scientists and engineers are often confronted with the problem of detecting the presence of signal l...
Abstract We describe a method to measure the gate capacitance and the gate current of transistors ...
A iow-noise, CCD electrometer is presented that makes use of devices akin to buried-channel, LDD NMO...
Minimizing electrical noise is an increasingly important topic. New systems and modulation technique...
The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was bu...
The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxid...
In this paper we examine the impact of deep sub-micron CMOS technology on analog circuit design with...
AbstractRecording systems in neurophysiological research have to deal with high sensor impedances of...
We have designed and built a very simple and efficient instrument that allows performing very accura...
Noise specifications for junction field-effect transistors are presented in different ways depending...
In modern submicrometer transistors, the influence of the internal base and emitter series resistanc...