Add to ORKGRadiation induced changes in semiconductor materials from 40 MeV proton radiation determined by improved infrared metho
Recombination lifetimes of minority carriers measured as function of temperature in silicon before a...
Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and sil...
Researchers have spent over 50 years improving the performance of HgCdTe infrared (IR) detectors and...
Proton irradiation effects on minority carrier lifetime in silicon and gallium arsenide semiconducto...
Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped si...
Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate ...
Semiconductor detector-dosimeter characteristics and application to problems of whole body dosimetry...
Electron decay rate and absorption cross sections for electron holes and recombination in gamma irra...
Defect energy levels and concentrations for proton irradiated, n-type silicon single crystal
Lithium drifted silicon semiconductor radiation detectors, proton absorption in metal, plastics, and...
Experimental studies on semiconductor surface recombination velocity, metal oxide semiconductor capa...
Photoconductivity method for measuring effects of radiation induced defects in n-type silico
A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within...
Influence of cobalt 60 gamma irradiation on bulk and surface recombination rates in n-type and p-typ...
Carrier lifetime measurements and recombination characteristics in silicon and radiation induced def...
Recombination lifetimes of minority carriers measured as function of temperature in silicon before a...
Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and sil...
Researchers have spent over 50 years improving the performance of HgCdTe infrared (IR) detectors and...
Proton irradiation effects on minority carrier lifetime in silicon and gallium arsenide semiconducto...
Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped si...
Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate ...
Semiconductor detector-dosimeter characteristics and application to problems of whole body dosimetry...
Electron decay rate and absorption cross sections for electron holes and recombination in gamma irra...
Defect energy levels and concentrations for proton irradiated, n-type silicon single crystal
Lithium drifted silicon semiconductor radiation detectors, proton absorption in metal, plastics, and...
Experimental studies on semiconductor surface recombination velocity, metal oxide semiconductor capa...
Photoconductivity method for measuring effects of radiation induced defects in n-type silico
A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within...
Influence of cobalt 60 gamma irradiation on bulk and surface recombination rates in n-type and p-typ...
Carrier lifetime measurements and recombination characteristics in silicon and radiation induced def...
Recombination lifetimes of minority carriers measured as function of temperature in silicon before a...
Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and sil...
Researchers have spent over 50 years improving the performance of HgCdTe infrared (IR) detectors and...