Add to ORKGContains an introduction and reports on three research projects.MIT Lincoln LaboratoryU.S. Air Force...
GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power elec...
We summarize recent applications of two real-time optical diagnostic techniques, reflectance differe...
AbstractThe electronic materials program at the University of Washington is a research collaboration...
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
Molecular layer epitaxy is a crystal growth method using chemical reactions of adsorbates on semicon...
Vapor phase growth technique for III-V compound semiconductors containing aluminu
The structural and electrical properties of sublimed GaAs films, the dielectric properties of anodic...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
The theoretical study of Molecular Beam Epitaxy allows us to model and construct an experiment with ...
Waseda University博士（工学）制度:新 ; 報告番号:甲3759号 ; 学位の種類:博士(工学) ; 授与年月日:2012/12/20 ; 早大学位記番号:新6132textdocto...
Introduction Since in 1920 Goldschmidt has been discovered Gallium Arsenide and later confirmed it ...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
Theoretical and experimental aspects of the growth of GaAs/Al/GaAs heterostructures have been invest...
mult i layer structures on insulators or semiconductors, suggest hat the method should be exploited ...
Contains an introduction and reports on three research projects.MIT Lincoln LaboratoryU.S. Air Force...
GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power elec...
We summarize recent applications of two real-time optical diagnostic techniques, reflectance differe...
AbstractThe electronic materials program at the University of Washington is a research collaboration...
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
Molecular layer epitaxy is a crystal growth method using chemical reactions of adsorbates on semicon...
Vapor phase growth technique for III-V compound semiconductors containing aluminu
The structural and electrical properties of sublimed GaAs films, the dielectric properties of anodic...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
The theoretical study of Molecular Beam Epitaxy allows us to model and construct an experiment with ...
Waseda University博士（工学）制度:新 ; 報告番号:甲3759号 ; 学位の種類:博士(工学) ; 授与年月日:2012/12/20 ; 早大学位記番号:新6132textdocto...
Introduction Since in 1920 Goldschmidt has been discovered Gallium Arsenide and later confirmed it ...
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are desc...
Theoretical and experimental aspects of the growth of GaAs/Al/GaAs heterostructures have been invest...
mult i layer structures on insulators or semiconductors, suggest hat the method should be exploited ...
Contains an introduction and reports on three research projects.MIT Lincoln LaboratoryU.S. Air Force...
GaAs is broadly used in modern electronics. The application of GaAs-based devices in high power elec...
We summarize recent applications of two real-time optical diagnostic techniques, reflectance differe...