Add to ORKGVapor phase growth technique and system for group 3A and 5A compound semiconductor
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped g...
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...
Vapor phase growth technique and system for several group 3 and 5 compound semiconductor
Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide al...
Vapor phase growth technique for III-V compound semiconductors containing aluminu
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
Prepared under contract no. NAS 12-538 by RCA Laboratories for NASA."December 1971."Cover title.Incl...
Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or d...
A research program on complex semiconducting compounds and alloys was completed that addressed the g...
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimon...
The III-V semiconductor materials system that was selected for continued cascade cell development wa...
In this report we summarize the results of a three year research program on high pressure vapor tran...
Solid crystal ingot growth by traveling heater method for electroluminescent light source
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped g...
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...
Vapor phase growth technique and system for several group 3 and 5 compound semiconductor
Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide al...
Vapor phase growth technique for III-V compound semiconductors containing aluminu
Vapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony al...
Prepared under contract no. NAS 12-538 by RCA Laboratories for NASA."December 1971."Cover title.Incl...
Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or d...
A research program on complex semiconducting compounds and alloys was completed that addressed the g...
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimon...
The III-V semiconductor materials system that was selected for continued cascade cell development wa...
In this report we summarize the results of a three year research program on high pressure vapor tran...
Solid crystal ingot growth by traveling heater method for electroluminescent light source
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped g...
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...