Add to ORKGWork done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered
Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal mater...
Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer fil...
A study of techniques for preparing n-type material and junctions which yield the most consistent hi...
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax
The unique properties of single-junction gallium phosphide devices incorporating both red and green ...
AbstractThis review paper discusses different synthesis methods and characterization techniques of g...
Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phas...
Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be ...
[[abstract]]p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates ha...
Aluminum alloy compounds as wide band gap semiconductors for electroluminescent light source
[[abstract]]High quality GaAs/AlxGa1−xAs/In0.5Ga0.5P single heterostructure electroluminescent devic...
[[abstract]]High quality Te‐doped Al0.7Ga0.3As/Mg ‐doped In0.5Ga0.5P on p‐type GaAs substrate single...
Barnett, Allen M.The cost of electricity generated by solar cells is an important factor limiting th...
Gallium phosphide (GaP) is a technically mature material widely used for LEDs with excellent optoele...
Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal mater...
Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer fil...
A study of techniques for preparing n-type material and junctions which yield the most consistent hi...
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax
The unique properties of single-junction gallium phosphide devices incorporating both red and green ...
AbstractThis review paper discusses different synthesis methods and characterization techniques of g...
Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phas...
Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be ...
[[abstract]]p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates ha...
Aluminum alloy compounds as wide band gap semiconductors for electroluminescent light source
[[abstract]]High quality GaAs/AlxGa1−xAs/In0.5Ga0.5P single heterostructure electroluminescent devic...
[[abstract]]High quality Te‐doped Al0.7Ga0.3As/Mg ‐doped In0.5Ga0.5P on p‐type GaAs substrate single...
Barnett, Allen M.The cost of electricity generated by solar cells is an important factor limiting th...
Gallium phosphide (GaP) is a technically mature material widely used for LEDs with excellent optoele...
Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal mater...
Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer fil...
A study of techniques for preparing n-type material and junctions which yield the most consistent hi...