Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
This paper reports the results of low dose rate (0.01-0.18 rads(Si)/sec) total ionizing dose (TID) t...
This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU...
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for ...
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to...
The purpose of this study is to examine the total ionizing dose susceptibility for the UC1823A pulse...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
Total ionizing dose and displacement damage dose testing were performed to characterize and determin...
This report presents total ionizing dose evaluation data for the Linear Technology Corporation LTC18...
The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation f...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to...
Total ionizing dose and displacement damage testing is performed to characterize and determine the f...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
This paper reports the results of low dose rate (0.01-0.18 rads(Si)/sec) total ionizing dose (TID) t...
This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU...
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for ...
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to...
The purpose of this study is to examine the total ionizing dose susceptibility for the UC1823A pulse...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
Total ionizing dose and displacement damage dose testing were performed to characterize and determin...
This report presents total ionizing dose evaluation data for the Linear Technology Corporation LTC18...
The purpose of this testing is to characterize the ISSI IS46DR16640B-25DBA25 parameter degradation f...
The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibil...
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to...
Total ionizing dose and displacement damage testing is performed to characterize and determine the f...
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displaceme...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
Total ionizing dose and displacement damage testing was performed to characterize and determine the ...
This paper reports the results of low dose rate (0.01-0.18 rads(Si)/sec) total ionizing dose (TID) t...
This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU...