The high-resolution spectral measurements for new local vibrational modes near 714 cm-1 due to the oxygen defect in semi-insulating GaAs are analyzed on the basis of a model calculation by self-consistent bond orbital approach. Two charge states of oxygen atom with 1 and 2 extra electrons are assigned to be responsible for these local modes. The observed frequencies are explained by the properties of Ga-O-1 and Ga-O-2 bonds and the calculated cohesive energy indicates that the O-2 state is stable. The results are in good agreement with the kinetic analysis
We report calculations of the electronic and atomic structures of neutral and charged divacancies in...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumina...
The basic idea of a defect model of photoconversion by an oxygen impurity in semi-insulating GaAs, p...
Two infrared local vibration mode (LVM) absorption lines occurring at 715 and 845 cm high minus 1 sh...
High-resolution electron-energy-loss spectroscopy (EELS) has been applied to investigate the electro...
Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a numb...
Quantum mechanical plane-wave pseudopotential (PWPP) calculations are used to study properties of va...
We study the influence of changes in the tight-binding parameters around point defects in semiconduc...
The vibrational modes of oxygen on Ag(0 0 1) are studied both theoretically, by density functional p...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.A detailed analysis of the me...
A detailed analysis of the measurement technique known as constant capacitance deep level transient ...
We have studied oxygen point defects with the plane-wave pseudopotential method in GaAs, GaN, and Al...
A temperature tuned light emitting diode (LED) has several advantages over conventional sources for ...
The measurement of DLTS on the alloy InxGa1-xAsyP1-y (0 less-than-or-equal-to y less-than-or-equal-t...
We report calculations of the electronic and atomic structures of neutral and charged divacancies in...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumina...
The basic idea of a defect model of photoconversion by an oxygen impurity in semi-insulating GaAs, p...
Two infrared local vibration mode (LVM) absorption lines occurring at 715 and 845 cm high minus 1 sh...
High-resolution electron-energy-loss spectroscopy (EELS) has been applied to investigate the electro...
Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a numb...
Quantum mechanical plane-wave pseudopotential (PWPP) calculations are used to study properties of va...
We study the influence of changes in the tight-binding parameters around point defects in semiconduc...
The vibrational modes of oxygen on Ag(0 0 1) are studied both theoretically, by density functional p...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.A detailed analysis of the me...
A detailed analysis of the measurement technique known as constant capacitance deep level transient ...
We have studied oxygen point defects with the plane-wave pseudopotential method in GaAs, GaN, and Al...
A temperature tuned light emitting diode (LED) has several advantages over conventional sources for ...
The measurement of DLTS on the alloy InxGa1-xAsyP1-y (0 less-than-or-equal-to y less-than-or-equal-t...
We report calculations of the electronic and atomic structures of neutral and charged divacancies in...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumina...