Fabricated one-dimensional (1D) materials often have abundant structural defects. Experimental observation and numerical calculation indicate that the broken translation symmetry due to structural defects may play a more important role than the quantum confinement effect in the Raman features of optical phonons in polar semiconductor quantum wires such as SiC nanorods, (C) 1999 Elsevier Science Ltd. All rights reserved
Defects are inevitable in solid materials as a result of fluctuations in thermal equilibrium and the...
International audienceRaman spectroscopy has been increasingly used, in recent years, to characteriz...
Silicon carbide with optically and magnetically active point defects offers unique opportunities for...
Fabricated one-dimensional (1D) materials often have abundant structural defects. Experimental obser...
Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carrie...
With increasing excitation wavelength from 514 to 782 mn, a significant difference in the Raman spec...
报道了用光谱的手段研究SiC纳米棒(NR)的结果.对于在实验中观察到LO模的大幅度红移及新出现的喇曼峰,认为在类似SiCNR的存在大量缺陷的极性纳米材料中,结构缺陷对材料特性的影响比量子限制效应更为重...
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how ...
Crystallographic defects such as vacancies and stacking faults engineer electronic band structure at...
The Raman spectra of GaP nanorods grown in carbon nanotube templates have been reported. The red shi...
In the present paper we develop for the first time a general theory calculating the Raman ...
Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growt...
The goal of the project work has been to study the symmetry of the phonons in 4H and 6H-SiC for diff...
The Raman spectra of two one-dimensional silicon nanowire samples with different excitation waveleng...
Silicon carbide (SiC) has a large number of polytypes of which 3C-, 4H-, 6H-SiC are most common. Sin...
Defects are inevitable in solid materials as a result of fluctuations in thermal equilibrium and the...
International audienceRaman spectroscopy has been increasingly used, in recent years, to characteriz...
Silicon carbide with optically and magnetically active point defects offers unique opportunities for...
Fabricated one-dimensional (1D) materials often have abundant structural defects. Experimental obser...
Novel Raman scattering in polar semiconductor SiC and TaC one-dimensional materials have been carrie...
With increasing excitation wavelength from 514 to 782 mn, a significant difference in the Raman spec...
报道了用光谱的手段研究SiC纳米棒(NR)的结果.对于在实验中观察到LO模的大幅度红移及新出现的喇曼峰,认为在类似SiCNR的存在大量缺陷的极性纳米材料中,结构缺陷对材料特性的影响比量子限制效应更为重...
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how ...
Crystallographic defects such as vacancies and stacking faults engineer electronic band structure at...
The Raman spectra of GaP nanorods grown in carbon nanotube templates have been reported. The red shi...
In the present paper we develop for the first time a general theory calculating the Raman ...
Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growt...
The goal of the project work has been to study the symmetry of the phonons in 4H and 6H-SiC for diff...
The Raman spectra of two one-dimensional silicon nanowire samples with different excitation waveleng...
Silicon carbide (SiC) has a large number of polytypes of which 3C-, 4H-, 6H-SiC are most common. Sin...
Defects are inevitable in solid materials as a result of fluctuations in thermal equilibrium and the...
International audienceRaman spectroscopy has been increasingly used, in recent years, to characteriz...
Silicon carbide with optically and magnetically active point defects offers unique opportunities for...