The photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well
Photoreflectance spectroscopy (PR) of In0.1Ga0.9As/GaAs and Al0.3Ga0.7 As/GaAs near-surface quantum ...
The competition between tunneling (vertical transport) and relaxation (exciton formation) of photoge...
Photoreflectance spectroscopy (PR) of In0.1Ga0.9As/GaAs and Al0.3Ga0.7 As/GaAs near-surface quantum ...
A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well...
Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double...
Single and multiple quantum wells of lattice-matched superlattices material GaAs/AlxGa1-xAs have bee...
The electron transfer from a narrow to a wide quantum well through a thin barrier is studied in the ...
The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs...
The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs...
The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of app...
We have found experimental evidence that the tunneling processes which are crucial to the detection ...
The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs...
The authors have measured photocurrent in In1-xGa xAs/InP quantum well samples as a function of temp...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
Photoreflectance spectroscopy (PR) of In0.1Ga0.9As/GaAs and Al0.3Ga0.7 As/GaAs near-surface quantum ...
The competition between tunneling (vertical transport) and relaxation (exciton formation) of photoge...
Photoreflectance spectroscopy (PR) of In0.1Ga0.9As/GaAs and Al0.3Ga0.7 As/GaAs near-surface quantum ...
A novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well...
Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double...
Single and multiple quantum wells of lattice-matched superlattices material GaAs/AlxGa1-xAs have bee...
The electron transfer from a narrow to a wide quantum well through a thin barrier is studied in the ...
The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs...
The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs...
The EER spectra of a single quantum well GaAs\AlxGa1-xAs electrode were studied as a function of app...
We have found experimental evidence that the tunneling processes which are crucial to the detection ...
The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs...
The authors have measured photocurrent in In1-xGa xAs/InP quantum well samples as a function of temp...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
Photoreflectance spectroscopy (PR) of In0.1Ga0.9As/GaAs and Al0.3Ga0.7 As/GaAs near-surface quantum ...
The competition between tunneling (vertical transport) and relaxation (exciton formation) of photoge...
Photoreflectance spectroscopy (PR) of In0.1Ga0.9As/GaAs and Al0.3Ga0.7 As/GaAs near-surface quantum ...