Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
We report on the material growth and device performance characterization of a strain-compensated In0...
X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
This work reports the growth and characterization of lattice-matched (LM) and strain-compensated (SC...
We report the low threshold current density operation of strain-compensated In0.64Ga0.36As/In0.38Al0...
Material characterization of quantum cascade (QC) structures aimed at producing emission in the near...
Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
We report on the material growth and device performance characterization of a strain-compensated In0...
X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
This work reports the growth and characterization of lattice-matched (LM) and strain-compensated (SC...
We report the low threshold current density operation of strain-compensated In0.64Ga0.36As/In0.38Al0...
Material characterization of quantum cascade (QC) structures aimed at producing emission in the near...
Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...