Add to ORKGElectron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtai...
Microdefects originating from impurity-dislocation interactions in undoped InP that had been anneale...
Electron irradiation-induced deep level defects have been studied in InP which has undergone high-te...
Electron irradiation induced defects in InP material which has been formed by high temperature annea...
Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After ...
Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level ...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscop...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscop...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...
Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have be...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), t...
Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phos...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtai...
Microdefects originating from impurity-dislocation interactions in undoped InP that had been anneale...
Electron irradiation-induced deep level defects have been studied in InP which has undergone high-te...
Electron irradiation induced defects in InP material which has been formed by high temperature annea...
Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied. After ...
Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level ...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscop...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscop...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy...
Deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) have be...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), t...
Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phos...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtai...
Microdefects originating from impurity-dislocation interactions in undoped InP that had been anneale...