Add to ORKGWe have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-related bound exciton emission dominates the radiative recombination. Localization nature of IEC bound exciton emissions in both S-rich and Te-rich side ZnSTe alloys are studied in detail. (c) 2006 Elsevier B.V. All rights reserved
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
We performed density functional calculations on the electronic properties of zincblende ZnS with var...
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe ...
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-...
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-...
The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x ...
The recombination dynamics of localized exciton in ZnS1-x Te-x ternary alloys has been investigated ...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
International audienceWe report on the excitonic photoluminescence from individual Te dyads in ZnSe....
The characteristic optical properties of ZnSTe alloy were studied by optical transmission and photol...
Photoluminescence and absorption measurements on ZnTe specimens with significantly higher oxygen con...
We have demonstrated blue-light emission from ZnSTe-based electroluminescence (EL) devices. Photoele...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
We performed density functional calculations on the electronic properties of zincblende ZnS with var...
We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe ...
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-...
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-...
The recombination kinetics of Te isoelectronic centers in ZnS1-xTex (0.0065 less than or equal to x ...
The recombination dynamics of localized exciton in ZnS1-x Te-x ternary alloys has been investigated ...
Isoelectronic center (IEC) forming deep level states in the forbidden gap can strongly enhance light...
International audienceWe report on the excitonic photoluminescence from individual Te dyads in ZnSe....
The characteristic optical properties of ZnSTe alloy were studied by optical transmission and photol...
Photoluminescence and absorption measurements on ZnTe specimens with significantly higher oxygen con...
We have demonstrated blue-light emission from ZnSTe-based electroluminescence (EL) devices. Photoele...
ZnTe1-xSx epitaxial layers grown on GaAs by molecular-beam epitaxy were studied by photoluminescence...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic press...
We performed density functional calculations on the electronic properties of zincblende ZnS with var...