Add to ORKGWe report the low threshold current density operation of strain-compensated In0.64Ga0.36As/In0.38Al0.62As quantum cascade lasers emitting near 4.94 mu m. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57 kA/cm(2) at 80K is achieved for an uncoated 20-mu m-wide and 2.5-mm-long laser
International audienceLow-threshold current density InAs quantum dash lasers are demonstrated by red...
InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250A...
High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5....
We report on the material growth and device performance characterization of a strain-compensated In0...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
We report low-threshold high-temperature operation of 7.4 mu m strain-compensated InGaAs/InAlAs quan...
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
Room-temperature continuous-wave (CW) operation of distributed-feedback quantum cascade laser (DFB-Q...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9....
Abstract—We report on a doping study on strain compensated quantum cascade lasers grown on indium ph...
Conventional strain-compensated quantum cascade (QC) lasers are fabricated with both tensile. strain...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
International audienceLow-threshold current density InAs quantum dash lasers are demonstrated by red...
InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250A...
High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5....
We report on the material growth and device performance characterization of a strain-compensated In0...
A short wavelength (lambda similar or equal to 3.5 mu m) strain-compensated InxGa(1-x)As/InyAl(1-y)A...
We report low-threshold high-temperature operation of 7.4 mu m strain-compensated InGaAs/InAlAs quan...
We develop 5.5-mu m InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InG...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
Room-temperature continuous-wave (CW) operation of distributed-feedback quantum cascade laser (DFB-Q...
Room temperature operation is an important criterion for high performance of quantum cascade lasers....
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9....
Abstract—We report on a doping study on strain compensated quantum cascade lasers grown on indium ph...
Conventional strain-compensated quantum cascade (QC) lasers are fabricated with both tensile. strain...
The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The ...
International audienceLow-threshold current density InAs quantum dash lasers are demonstrated by red...
InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250A...
High-power strain-compensated In1-xGaxAs/ln(1-y)Al(y)As quantum cascade lasers (lambda similar to 5....