Add to ORKGIn this paper, how the dots' radius, At concentration and external electric field affect the single electron energy states in GaAs/AlxGa1-xAs spherical quantum dots are discussed in detail. Furthermore, the modification of the energy states is calculated when the difference in effective electron mass in GaAs and AlxGa1-xAs are considered. In addition, both the analytical method and the plane wave method are used in calculation and the results are compared, showing that they are in good agreement with each other. The results and methods can provide useful information for the future research and potential applications of quantum dots
The approximative single-band effective mass model for calculating the electronic structure and opti...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
WOS: 000316832600046We calculated the energy eigenvalues and eigenfunctions of the ground and excite...
The effect of electric field on the electronic structure of a spherical quantum dot is studied in th...
In this research, the effect of the uniform electric field on the ground-state of a centered hydroge...
The dependence of the limiting energy on the size of spherical quantum points made of GaAs is theore...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
The effect of a constant electric field and donor impurity on the energies and oscillator strengths ...
The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are inve...
A strained-modified, single-band, constant-potential three-dimensional model is formulated to study ...
9th International Physics Conference of the Balkan Physical Union, BPU 2015 -- 24 August 2015 throug...
The electronic structures of N quantum dot molecules (QDMs) are investigated theoretically in the fr...
Energies of the ground and some excited states of on-centre donors (D-O) in GaAs/Ga1-xAlxAs spherica...
The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framew...
Semiconductor quantum dots (QDs) have unique atom-like properties. In this work, the electronic stat...
The approximative single-band effective mass model for calculating the electronic structure and opti...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
WOS: 000316832600046We calculated the energy eigenvalues and eigenfunctions of the ground and excite...
The effect of electric field on the electronic structure of a spherical quantum dot is studied in th...
In this research, the effect of the uniform electric field on the ground-state of a centered hydroge...
The dependence of the limiting energy on the size of spherical quantum points made of GaAs is theore...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
The effect of a constant electric field and donor impurity on the energies and oscillator strengths ...
The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots are inve...
A strained-modified, single-band, constant-potential three-dimensional model is formulated to study ...
9th International Physics Conference of the Balkan Physical Union, BPU 2015 -- 24 August 2015 throug...
The electronic structures of N quantum dot molecules (QDMs) are investigated theoretically in the fr...
Energies of the ground and some excited states of on-centre donors (D-O) in GaAs/Ga1-xAlxAs spherica...
The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framew...
Semiconductor quantum dots (QDs) have unique atom-like properties. In this work, the electronic stat...
The approximative single-band effective mass model for calculating the electronic structure and opti...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
WOS: 000316832600046We calculated the energy eigenvalues and eigenfunctions of the ground and excite...