Halogen adsorption induces roughening of Si(100) producing pits and regrowth structures that depend on the type of adsorbed halogen and coverage. It is thought that this spontaneous roughening arises from steric repul- sions between adsorbates. Recently, new interactions present in the Cl/Si(100) system have been suggested that can also contribute to altering the surface morphology. We used Monte Carlo simulations to determine the effects of the proposed interactions on the surface morphologies as a function of coverage.Fil: Mirabella, D. A.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nac...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
First-principles calculations of work function tuning induced by different chemical terminations on...
Surface roughening due to anisotropic etching was studied experimentally and modeled using the Monte...
Through a detailed study of Cl adsorption on Si(100) using scanning-tunneling microscopy, we identif...
Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal...
123 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.With variable temperature STM...
123 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.With variable temperature STM...
The evolution and equilibrium morphology of Si(100) with 0.1 monolayer of adsorbed Cl was studied at...
116 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.Si(100) is one of the most th...
We have studied the etching of Si(100)-2x1 by Cl and Br, using scanning tunneling microscopy to obta...
Scanning tunneling microscopy studies of spontaneous halogen etching of Si(100)-2x1 and Si(111) in t...
We have built a large, reliable model of a Si(100) surface, which is appropriate for the study of su...
In this study, molecular dynamics simulation method is used to investigate the interactions of Cl co...
In this study, molecular dynamics simulation method is used to investigate the interactions of Cl co...
This paper reports an experimental study aimed to develop a suitable and reliable procedure to graft...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
First-principles calculations of work function tuning induced by different chemical terminations on...
Surface roughening due to anisotropic etching was studied experimentally and modeled using the Monte...
Through a detailed study of Cl adsorption on Si(100) using scanning-tunneling microscopy, we identif...
Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal...
123 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.With variable temperature STM...
123 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.With variable temperature STM...
The evolution and equilibrium morphology of Si(100) with 0.1 monolayer of adsorbed Cl was studied at...
116 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.Si(100) is one of the most th...
We have studied the etching of Si(100)-2x1 by Cl and Br, using scanning tunneling microscopy to obta...
Scanning tunneling microscopy studies of spontaneous halogen etching of Si(100)-2x1 and Si(111) in t...
We have built a large, reliable model of a Si(100) surface, which is appropriate for the study of su...
In this study, molecular dynamics simulation method is used to investigate the interactions of Cl co...
In this study, molecular dynamics simulation method is used to investigate the interactions of Cl co...
This paper reports an experimental study aimed to develop a suitable and reliable procedure to graft...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
First-principles calculations of work function tuning induced by different chemical terminations on...
Surface roughening due to anisotropic etching was studied experimentally and modeled using the Monte...