We present an energy-balance model of the electronic intersubband relaxation in optically excited n-type Ge/SiGe quantum wells with absorption resonance in the THz range. To this aim, the energy relaxation rates of the electron system due to interactions with both nonpolar optical and acoustic phonons are calculated. The time dependence of the relative differential transmission is also evaluated and compared with experimental data from recent pump-probe measurements. The energy relaxation rates due to acoustic and optical phonon are investigated for different electron temperatures, set by the pump beam intensity. We find that the relaxation dynamics strongly depends on the intersubband energy spacing when this is close to the optical phonon...
Time-resolved studies of the dynamics of intersubband transitions are reported in three different st...
We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
We present an energy-balance model of the electronic intersubband relaxation in optically excited n-...
Electron-optical phonon interaction is the dominant energy-loss mechanism in low dimensional Ge/SiGe...
Electron-optical phonon interaction is the dominant energy-loss mechanism in low-dimensional Ge/SiGe...
In this paper, we have experimentally and numerically studied the nonradiative intersubband (ISB) re...
In this work we have experimentally and numerically studied the non-radiative intersubband (ISB) rel...
n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si...
We measured the non-radiative intersubband relaxation time in n-type modulation-doped Ge/SiGe multi-...
n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si...
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a...
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a...
Time-resolved studies of the dynamics of intersubband transitions are reported in three different st...
Time-resolved studies of the dynamics of intersubband transitions are reported in three different st...
We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...
We present an energy-balance model of the electronic intersubband relaxation in optically excited n-...
Electron-optical phonon interaction is the dominant energy-loss mechanism in low dimensional Ge/SiGe...
Electron-optical phonon interaction is the dominant energy-loss mechanism in low-dimensional Ge/SiGe...
In this paper, we have experimentally and numerically studied the nonradiative intersubband (ISB) re...
In this work we have experimentally and numerically studied the non-radiative intersubband (ISB) rel...
n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si...
We measured the non-radiative intersubband relaxation time in n-type modulation-doped Ge/SiGe multi-...
n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si...
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a...
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a...
Time-resolved studies of the dynamics of intersubband transitions are reported in three different st...
Time-resolved studies of the dynamics of intersubband transitions are reported in three different st...
We report time-resolved (ps) studies of the dynamics of intersubband transitions in p-Si/SiGe multi-...
The problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of th...