CHARACTERIZATION OF THE RESPONSE OF A DOUBLE SIDE M-STRIP SILICON DETECTOR TO X-RAYS IN THE DIAGNOSTIC ENERGY-RANGE
- BANDETTINI A
- BENCIVELLI W
- BERTOLUCCI E
- BOTTIGLI U
- CONTI M
- DEL GUERRA A
- FANTACCI ME
- RANDACCIO P
- ROSSO V
- RUSSO P
- STEFANINI A
Publication date
January 1993
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We are investigating the use of a double side mu-strip silicon crystal for X-ray detection. The detector is 300 mum thick and the read-out pitch is 100 mum for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector has been irradiated by Am-241 and Cd-109 sources. Different zones within the 100 mum read-out, pitch have been individually exposed. Thus, the following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution, (d) the spatial resolution. The absolute efficiency of the detector has also been measured at three energy values
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