Two different GaAs crystals, one LEC and one LPE, have been irradiated with photons of various energies, to compare their response in view of a possible application for digital radiography. Experimental results include I-V curves, charge collection efficiency, detection efficiency and energy resolution as a function of bias. A comparison is made with a simulation program that takes into account X-ray interactions, electric field and charge trapping inside the material
Position sensitive hybrid pixel detectors have been fabricated by bump bonding silicon or bulk grown...
Recent advances in detector technology have made possible to develop imaging detectors with enhanced...
Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and s...
The electrical characteristics of a LPE n-type GaAs crystal have been fully measured. The experiment...
The electrical characteristics, charge collection efficiency and energy resolution of a GaAs detecto...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
In this paper we present the result of an experimental study concerning the charge collection effici...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
We present a comparative study of the performance of elemental and compound solid state crystals of ...
In this paper we present the results of an experimental study concerning different contact depositio...
We present a comparative study of the performance of elemental and compound solid state crystals of ...
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room te...
Position sensitive hybrid pixel detectors have been fabricated by bump bonding silicon or bulk grown...
Recent advances in detector technology have made possible to develop imaging detectors with enhanced...
Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and s...
The electrical characteristics of a LPE n-type GaAs crystal have been fully measured. The experiment...
The electrical characteristics, charge collection efficiency and energy resolution of a GaAs detecto...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
In this paper we present the result of an experimental study concerning the charge collection effici...
In this work we present the results of a systematic study about SI GaAs detectors as a function of s...
We present a comparative study of the performance of elemental and compound solid state crystals of ...
In this paper we present the results of an experimental study concerning different contact depositio...
We present a comparative study of the performance of elemental and compound solid state crystals of ...
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room te...
Position sensitive hybrid pixel detectors have been fabricated by bump bonding silicon or bulk grown...
Recent advances in detector technology have made possible to develop imaging detectors with enhanced...
Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and s...