Test results on heavily irradiated silicon detectors for the CMS experiment at LHC RID A-6508-2010
- Bozzi C
- Albergo S
- Angarano MM
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- Babucci E
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- Glessing B
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- Lariccia P
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- Verdini PG
- Viertel G
- Xie Z
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- Wittmer B
DOIAbstract
We report selected results of laboratory measurements and beam tests of heavily irradiated microstrip silicon detectors. The detectors were single-sided devices, produced by different manufacturers and irradiated with different sources, for several total ionizing doses and fluences up to 4 x 10(14) 1-MeV-equivalent neutrons per cm(2). Strip resistance and capacitance, detector leakage currents and breakdown performance were measured before and after irradiations. Signal-to-noise ratio and detector efficiency were studied in beam tests, for different values of the detector temperature and of the read-out pitch, as a function of the detector bias voltage. The goal of these test is to optimise the design of the final prototypes for the Silicon...
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