We explored the feasibility of employing strontium titanate SrTiO3 as semiconducting material in field effect and ferroelectric field effect epitaxial devices. Oxygen reduced SrTiO3-\u3b4 exhibits low temperatures mobility values comparable with those commonly found for silicon. By Pulsed Laser Deposition, we realized patterned field effect devices, showing a resistance modulation up to 90%. These results could open new perspectives for crystalline oxides electronics
textDoped strontium titanate (ST) thin films were investigated for highdensity memory applications....
Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perov...
Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high el...
We explored the feasibility of employing strontium titanate SrTiO3 as semiconducting material in fie...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
The study of quantum phenomena in semiconductors requires epitaxial structures with exceptionally hi...
Due to their tendency to form ionic states, transition metal oxides and especially SrTiO3 exhibit ex...
ABSTRACT: SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germaniu...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are usef...
The first section of this thesis discusses integration of SrTiO3 grown by molecular beam epitaxy (MB...
Novel materials with unique electronic properties are required to meet the demands of next-generatio...
We have performed ferroelectric field effect experiments using an epitaxialheterostructure composed ...
University of Minnesota Ph.D. dissertation. October 2015. Major: Material Science and Engineering. A...
SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm, and 250 nm were prepared on MgO (100) subs...
In this project, 50nm/100nm-thick epitaxial SrRuO3 and BaTiO3 thin films were grown on , and SrTiO...
textDoped strontium titanate (ST) thin films were investigated for highdensity memory applications....
Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perov...
Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high el...
We explored the feasibility of employing strontium titanate SrTiO3 as semiconducting material in fie...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
The study of quantum phenomena in semiconductors requires epitaxial structures with exceptionally hi...
Due to their tendency to form ionic states, transition metal oxides and especially SrTiO3 exhibit ex...
ABSTRACT: SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germaniu...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are usef...
The first section of this thesis discusses integration of SrTiO3 grown by molecular beam epitaxy (MB...
Novel materials with unique electronic properties are required to meet the demands of next-generatio...
We have performed ferroelectric field effect experiments using an epitaxialheterostructure composed ...
University of Minnesota Ph.D. dissertation. October 2015. Major: Material Science and Engineering. A...
SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm, and 250 nm were prepared on MgO (100) subs...
In this project, 50nm/100nm-thick epitaxial SrRuO3 and BaTiO3 thin films were grown on , and SrTiO...
textDoped strontium titanate (ST) thin films were investigated for highdensity memory applications....
Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perov...
Paraelectrical tuning of a charge carrier density as high as 10 13 cm-2 in the presence of a high el...