Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's

Buttari, D
CHINI, Alessandro
Meneghesso, G.
Zanoni, E.
Sawdai, D.
Pavlidis, D.
Hsu, S. S. H.

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Publication date

January 2000

DOI

10.1109/ICIPRM.2000.850281

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

The hole multiplication factor in pnp In0.52Al0.48As/In0.53G0.47As single heterojunction bipolar transistors (HBT's) has been measured as a function of the base-collector bias. Hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature

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Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's

Abstract

Extracted data

Hole impact ionization coefficient in (100)-oriented In0.53Ga0.47As based on PNP InAlAs/InGaAs HBT's

Abstract

Extracted data

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