The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

Varlachev, Valery Aleksandrovich
Golovathkiy, Aleksey Vasilievich
Emets, Evgeny Gennadievich
Butko, Yana Aleksandrovna

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Publication date

January 2016

DOI

10.1088/1757-899X/135/1/012047

Publisher

IOP Publishing

ISSN

1757-8981

Abstract

The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD

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The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

Abstract

Extracted data

The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

Abstract

Extracted data

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