International audienceWe present the conduction mechanisms of Ba 2/3 Sr 1/3 TiO 3 thin films integrated in metal-insulator-metal (MIM) capacitors and the modelling of the frequency-dependent electrostrictive resonances (in the 100 MHz-10 GHz domain) induced in the devices upon applying different voltage biases. Au/BST/Ir MIM structures on MgO substrates have been fabricated and, depending on their specific polarization, we highlighted different conduction mechanisms in the devices. Depending on the dc bias polarity, the conduction current across the material shows a space-charge-limited-current behavior under negative polarization, while under positive bias the conduction obeys an electrode-limited Schottky-type law at the Au/ BST interface...
<p>The purpose of this thesis is to investigate piezoelectric and ferroelectric thin film device tec...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...
International audienceWe present the conduction mechanisms of Ba 2/3 Sr 1/3 TiO 3 thin films integra...
The bias-voltage-dependent permittivity of (Ba0.7Sr0.3)TiO3 (BST) thin films with thicknesses rangin...
International audienceWe report the high-frequency electrical characterization of Ba2/3Sr1/3TiO3 (BS...
A model for tunable thin film bulk acoustic resonators (TFBARs) based on ferroelectric films is prop...
Engineering of a frequency dependent permittivity can be of interest for various sensor application....
Electrically tunable solidly mounted thin film bulk acoustic resonators based on Ba0.25 Sr0.75 Ti O3...
Barium strontium titanate (BST) thin-film varactors promise very good performance in RF frontends in...
The dielectric properties of (Ba0.5Sr0.5)TiO3 (BST) thin films with high electrical resistivity were...
Today widely used ferroelectrics are investigated since the discovery of the ferroelectricity in Roc...
<p> The main focus of this thesis is the study of a novel component based on ferroelectric BaxSr1−xT...
Thin film Au/Pt/Ba0.25Sr0.75TiO3/Pt/Au/-Ti capacitor structures were fabricated on fused silica subs...
In this paper we present the impact of acoustic resonances excited by electrostriction in BST thin-f...
<p>The purpose of this thesis is to investigate piezoelectric and ferroelectric thin film device tec...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...
International audienceWe present the conduction mechanisms of Ba 2/3 Sr 1/3 TiO 3 thin films integra...
The bias-voltage-dependent permittivity of (Ba0.7Sr0.3)TiO3 (BST) thin films with thicknesses rangin...
International audienceWe report the high-frequency electrical characterization of Ba2/3Sr1/3TiO3 (BS...
A model for tunable thin film bulk acoustic resonators (TFBARs) based on ferroelectric films is prop...
Engineering of a frequency dependent permittivity can be of interest for various sensor application....
Electrically tunable solidly mounted thin film bulk acoustic resonators based on Ba0.25 Sr0.75 Ti O3...
Barium strontium titanate (BST) thin-film varactors promise very good performance in RF frontends in...
The dielectric properties of (Ba0.5Sr0.5)TiO3 (BST) thin films with high electrical resistivity were...
Today widely used ferroelectrics are investigated since the discovery of the ferroelectricity in Roc...
<p> The main focus of this thesis is the study of a novel component based on ferroelectric BaxSr1−xT...
Thin film Au/Pt/Ba0.25Sr0.75TiO3/Pt/Au/-Ti capacitor structures were fabricated on fused silica subs...
In this paper we present the impact of acoustic resonances excited by electrostriction in BST thin-f...
<p>The purpose of this thesis is to investigate piezoelectric and ferroelectric thin film device tec...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...