LBIC measurement optimization to detect laser annealing induced defects in Si
- Larmande, Yannick
- Vervisch, Vanessa
- Delaporte, Philippe
- Coustillier, Gaelle
- Sarnet, Thierry
- Sentis, Marc
- Etienne, Hasnaa
- Torregrosa, Frank
DOIAbstract
International audienceBecause of the short penetration depth of ultraviolet (UV) in semiconductor, the realization of UV sensors requires the reduction of the junction thickness. Excimer laser annealing (ELA) is a new annealing technical allowing to achieve a thin layer (<30 nm) heavily boron doped (R-sq < 350 Omega/sq) on n-type silicon substrate together with a good profile abruptness (<3 nm/dec). The small size of the laser beam requires a scanning procedure for processing large surfaces. That could generate non-homogeneities resulting in defect growth. In order to investigate these phenomena, we developed a Light Beam Induced Current (LBIC) measurement set-up. LBIC analyses consist in the measurement of the photocurrent generated by a l...
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