Radiation and COTS at ground level

26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Toulouse, FRANCE, OCT 05-19, 2015International audienceThis tutorial surveys single event effects (SEE) induced by terrestrial cosmic rays on current commercial CMOS technologies. After describing the natural radiation environment at ground and atmospheric levels, the tutorial describes the physics of SEEs, from the main mechanisms of interaction between atmospheric radiation (neutrons, protons, muons) and circuit materials to the electrical response of transistors, cells and complete circuits. SEE characterization using accelerated and real-time tests is examined, as well as modeling and numerical simulation issues. Special emphasis finally concerns the radiation response of advanced technologies, including deca-nanometer bulk, FD-SOI and FinFET families. (C) 2015 Elsevier Ltd. All rights reserved