Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM
- Autran, Jean-Luc
- Roche, P.
- Sauze, S.
- Gasiot, G.
- Munteanu, Daniela
- Loaiza, P.
- Zampaolo, M.
- Borel, J.
Publication date
August 2009
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
8th European Workshop on Radiation Effects on Components and Systems, Univ Jyvaskyla, Dept Phys, Jyvaskyla, FINLAND, SEP 10-12, 2008International audienceWe report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology
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