Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation
- Aziza, Hassen
- Ayari, H.
- Onkaraiah, S.
- Moreau, Mathieu
- Portal, Jean-Michel
- Bocquet, Marc
Publication date
April 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceIn this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology
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