Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature

International audienceThe composition and morphology of the product phase after the reaction of Ni thin film with In0.53Ga0.47As substrate at 350 degrees C were investigated by atom probe tomography, X-ray diffraction, and scanning electron microscopy. Results show the formation of a unique Ni-3(In0.53Ga0.47) As phase with a low concentration in-depth gradient of Ni and the decoration of the grain boundaries by In atoms. These analyses indicate that Ni is the main diffusing specie during the growth of Ni-3(In0.53Ga0.47) As phase. The volume of the product phase is higher than the volume of the consumed Ni film as expected for the formation of Ni-3(In0.53Ga0.47) As phase. Published by AIP Publishing