3 % Ti-Tungsten Diffusion Barriers II. The Effect of Deposition Temperature and Nitrogen Inclusion

The use of high aspect ratio contact structures with electroplated gold interconnects on state-of-the-art bipolar integrated circuits requires very high performance diffusion barriers. In the present work, these are obtained by adding nitrogen to the sputtering ambient and optimizing the substrate temperature during deposition. This results in perfor-mance not obtainable previously with this material system