AlGaAs/GaAs Heterostructure Solar Cells Grown by Molecular Beam Epitaxy

The AlGaAs/GaAs heterostructure solar cells were fabricated by molecular beam epitaxy (MBE), which provides ultra-thin molecular layers of the design structure. The typical efficiency of the solar cells fabricated and their characteristics are η = 17%, Voc = 0.73 V, Isc = 33 mA/cm2, and F.F. = 0.7. Spectral response of the solar cells show a broad spectrum ranging from 500 to 900 nm, corresponding to the window effect of the AlGaAs and the band edge of the GaAs materials