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Over the past few decades, the miniaturization of metal-oxide-semiconductor field-effect transistors...
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-C...
Transistor scaling following per Moore’s Law slows down its pace when entering into nanometer regime...
A design trade-off study for n-channel δ-doped Si/SiGe heterojunction MOSFET's has been performed us...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Silicon Germanium (Si1-xGex) is an alloy semiconductor that has caught considerable attention of the...
Rights Copyright © is held by the author. Digital access to this material is made possible by the Un...
This thesis is made available online and is protected by original copyright. Please scroll down to v...
textSince metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for int...
textSince metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for int...
none9This study aims to understand the potential of buried Silicon-Germanium (SiGe) technology from ...
The advances in the growth of pseudomorphic silicon-germanium epitaxial layer combined with the stro...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN020690 / BLDSC - British Library D...
Over the past few decades, the miniaturization of metal-oxide-semiconductor field-effect transistors...
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-C...
Transistor scaling following per Moore’s Law slows down its pace when entering into nanometer regime...
A design trade-off study for n-channel δ-doped Si/SiGe heterojunction MOSFET's has been performed us...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Silicon Germanium (Si1-xGex) is an alloy semiconductor that has caught considerable attention of the...
Rights Copyright © is held by the author. Digital access to this material is made possible by the Un...
This thesis is made available online and is protected by original copyright. Please scroll down to v...
textSince metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for int...
textSince metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for int...
none9This study aims to understand the potential of buried Silicon-Germanium (SiGe) technology from ...
The advances in the growth of pseudomorphic silicon-germanium epitaxial layer combined with the stro...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Comp...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN020690 / BLDSC - British Library D...
Over the past few decades, the miniaturization of metal-oxide-semiconductor field-effect transistors...
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-C...
Transistor scaling following per Moore’s Law slows down its pace when entering into nanometer regime...