Nanomechanical Properties of ultra thin Films Synthesized by Atomic Layer Deposition Helmut Baumgart1,2

At the present time large bodies of extensive studies exist on the electrical characterization of Atomic Layer Deposition (ALD) films. However, there exists a lack of systematic studies regarding the mechanical properties of ALD grown thin films. In many cases the mechanical properties and surface morphologies are affected by post deposition elevated process temperatures, which cause phase changes in various technologically important ALD metal oxide films. Little is known about the impact of those phase changes on the nano-mechanical properties of ALD HfO2. Phase change of ALD HfO2 impacts the mechanical and electrical properties of high-k dielectric gate insulators depending on whether a “Gate First ” or “Gate Last