A Unified Channel Thermal Noise Model for Short Channel MOS Transistors

Abstract—A unified channel thermal noise model valid in all operation regions is presented for short channel MOS transistors. It is based on smooth interpolation between weak and strong inversion models and consistent physical model including velocity saturation, channel length modulation, and carrier heating. From testing for noise benchmark and comparing with published noise data, it is shown that the proposed noise model could be useful in simulating the MOSFET channel thermal noise in all operation regions. Index Terms—Unified channel thermal noise model, all region noise model, interpolation approach, BSIM3 noise model, short channel effect I