The crystal l ine perfection f Sn-doped GaAs crystals grown by the hori-zontal Br idgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded oped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. Steinemann and Zimmerl i (1) have grown disloca-t ion-free undoped crystals of GaAs by the Czochralski technique by maintaining careful control of the stoichi-ometry of the melt composition and of the temperature gradients in the solid. In this paper we report the growth of dislocation-free undoped and heavi ly Sn-d...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallizatio...
Major improvements in the structural and electrical perfection of single crystals of III-V compound ...
GaAs-single crystals (diameter : 52 mm - 68 mm) have been grown in a two-zone Bridgman/Stockbarger-t...
AbstractGrowth of GaAs crystals by the vertical Bridgman technique has several advantages over LEC —...
GaAs-single crystals ($\varnothing$ : 52 mm - 68 mm) have been grown in a two-zone Bridgman/Stockbar...
International audienceDue to large scale applications the crystal growth technology of gallium arsen...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
Multi zone furnaces, automation concepts and laboratory technologies have been developed using the V...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallizatio...
Major improvements in the structural and electrical perfection of single crystals of III-V compound ...
GaAs-single crystals (diameter : 52 mm - 68 mm) have been grown in a two-zone Bridgman/Stockbarger-t...
AbstractGrowth of GaAs crystals by the vertical Bridgman technique has several advantages over LEC —...
GaAs-single crystals ($\varnothing$ : 52 mm - 68 mm) have been grown in a two-zone Bridgman/Stockbar...
International audienceDue to large scale applications the crystal growth technology of gallium arsen...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
Multi zone furnaces, automation concepts and laboratory technologies have been developed using the V...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
cited By 4International audienceHigh quality micrometer scale GaAs crystals were grown by chemical b...
GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallizatio...