Add to ORKGAbstract—This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces. Index Terms—Extraction quantum efficiency, GaN, internal quantum efficiency, light-emitting diodes (LEDs)....
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale t...
In this study, a novelpatterned sapphiresubstrate(PSS) was used to obtain mesa-typelight-emitting di...
The generation of white light using the combination of III-nitride blue light-emitting diodes (LEDs)...
employing double diffuse surfaces were fabricated. This novel LED structure includes one top transmi...
Abstract—We investigate the mechanism responding for perfor-mance enhancement of gallium nitride (Ga...
Patterned sapphire substrate (PSS) has been used to improve both internal quantum efficiency (IQE) a...
The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterne...
(CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency o...
In this study, a novel patterned sapphire substrate (PSS) was used to obtain mesa-type light-emittin...
Abstract—In this paper, we demonstrated the high perfor-mance GaN-based LEDs by using a high aspect ...
This project was to design and fabricate a high-brightness GaN based light emitting diode (LED) on a...
Abstract—Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture...
An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was...
Improving luminous efficiency is a substantial requirement for light emitting diodes (LEDs). To achi...
In the present paper, optical characteristics of InGaN/GaN multiple quantum wells light emitting dio...
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale t...
In this study, a novelpatterned sapphiresubstrate(PSS) was used to obtain mesa-typelight-emitting di...
The generation of white light using the combination of III-nitride blue light-emitting diodes (LEDs)...
employing double diffuse surfaces were fabricated. This novel LED structure includes one top transmi...
Abstract—We investigate the mechanism responding for perfor-mance enhancement of gallium nitride (Ga...
Patterned sapphire substrate (PSS) has been used to improve both internal quantum efficiency (IQE) a...
The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterne...
(CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency o...
In this study, a novel patterned sapphire substrate (PSS) was used to obtain mesa-type light-emittin...
Abstract—In this paper, we demonstrated the high perfor-mance GaN-based LEDs by using a high aspect ...
This project was to design and fabricate a high-brightness GaN based light emitting diode (LED) on a...
Abstract—Using a GaN nanorod template in a hydride vapor phase epitaxy (HVPE) system can manufacture...
An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was...
Improving luminous efficiency is a substantial requirement for light emitting diodes (LEDs). To achi...
In the present paper, optical characteristics of InGaN/GaN multiple quantum wells light emitting dio...
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale t...
In this study, a novelpatterned sapphiresubstrate(PSS) was used to obtain mesa-typelight-emitting di...
The generation of white light using the combination of III-nitride blue light-emitting diodes (LEDs)...