In this work synchrotron radiation photoemission spectroscopy (SRPES) is used to study InP surfaces after different wet chemical treatments. All results are compared to a typical fingerprint of surface components present on an as received InP sample. It is shown that acidified (HCl and H2SO4) treatments efficiently remove the native phosphate, although components like P0, In0 and P(2±∆)+ remain present. In alkaline solution (NH4OH) oxide remains present at the surface. As an alternative treatment, the immersion into (NH4)2S was studied. This passivation treatment results in fewer surface components which suggests that a higher quality surface is obtained
It has been shown that improved surface properties of InP could be achieved through HF and sulfide N...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(1...
In this work synchrotron radiation photoemission spectroscopy SRPES is used to study InP surfaces ...
The influence of different wet chemical treatments (HCl, H2SO4, NH4OH) on the composition of InP sur...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auge...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
Factors determining etching and passivation of n-type InP in H2SO4 and HCl solution and the correspo...
[[abstract]]The cleaning and etching of the InP(100) surface by chlorine gas is investigated using s...
Today all transistors in integrated circuits are fabricated on Si substrates, in some cases alloyed ...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
International audienceIndium phosphide (InP) surfaces are greatly affected by ionic bombardment. We ...
It has been shown that improved surface properties of InP could be achieved through HF and sulfide N...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(1...
In this work synchrotron radiation photoemission spectroscopy SRPES is used to study InP surfaces ...
The influence of different wet chemical treatments (HCl, H2SO4, NH4OH) on the composition of InP sur...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auge...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
Factors determining etching and passivation of n-type InP in H2SO4 and HCl solution and the correspo...
[[abstract]]The cleaning and etching of the InP(100) surface by chlorine gas is investigated using s...
Today all transistors in integrated circuits are fabricated on Si substrates, in some cases alloyed ...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
International audienceIndium phosphide (InP) surfaces are greatly affected by ionic bombardment. We ...
It has been shown that improved surface properties of InP could be achieved through HF and sulfide N...
The properties of InP are such that it has a wide range of applicability in the fabrication of elect...
Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(1...