GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture

The feasibility of a novel approach for single electron quantum LSIs (Q-LSIs) is investigated. It is based on the binary-decision-diagram (BDD) logic architecture, using arrays of GaAs and InGaAs single electron BDD node devices formed on hexagonal nanowire networks. Single electron branch switches using nanometer-scale Schottky wrap gates (WPGs) on AlGaAs/GaAs etched nanowires and on InGaAs nanowires by selective MBE growth were fabricated. They showed clear conductance oscillation characteristics controlled by a single electron lateral resonant tunneling. Successful design and fabrication of GaAs-based single electron BDD node devices and circuits including OR logic elements and a 2 bit adder indicates basic feasibility of realizing single electron Q-LSIs by the novel approach