Abstract-This paper highlights he importance ofequation formulation and associated programming efficiency with respect o modeling of semiconductor phenomena via numerical methods. Two numerical modeling efforts are developed inthis paper for one-space dimension device modeling. It is shown on a per iteration basis that he ratio of the computational effort between the two methods i a factor of sixteen. The reduction in the computational effort between the two methods was realized by reformulating the mathematical equations and by reconsidering the effect of programming efficiency. A by-product of the reformulation was a factor of two to three improvement i the convergence rate of the nonlinear iteration. With all considerations, the overall ...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.A finite difference approximat...
Due to the complicated behaviour of power semiconductor devices, numerical modelling has become an i...
A new numerical method for semiconductor device simulation is presented. The additive decomposition ...
This paper highlights the importance of equation formulation and associated programming efficiency w...
In this paper mathematical and computational aspects of device modelling are treated. Four main subj...
PhDElectrical engineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://...
incentive to concentrate persistently on device modeling. The fundamental properties which represent...
This book describes the computational challenges posed by the progression toward nanoscale electroni...
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal inte...
Abstract: The basic mathematical results on the elliptic boundary value problem which corresponds to...
Partially supported by CNR Sp. Proj. on Informatic systems and Parallel comput. and CNR contr. 88.00...
In order to obtain fast and reliable simulators for nanoelectronic devices, both an algorithmic opti...
AbstractThis paper studies a multigrid method for the solution of the semiconductor device simulatio...
The work covers the electrophysical processes in the up-to-date semiconductor devices. The aim is to...
This paper presents a modelling and simulation study of advanced semiconductor devices. Different Te...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.A finite difference approximat...
Due to the complicated behaviour of power semiconductor devices, numerical modelling has become an i...
A new numerical method for semiconductor device simulation is presented. The additive decomposition ...
This paper highlights the importance of equation formulation and associated programming efficiency w...
In this paper mathematical and computational aspects of device modelling are treated. Four main subj...
PhDElectrical engineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://...
incentive to concentrate persistently on device modeling. The fundamental properties which represent...
This book describes the computational challenges posed by the progression toward nanoscale electroni...
Numerical simulation and modelling of electric circuits and semiconductor devices are of primal inte...
Abstract: The basic mathematical results on the elliptic boundary value problem which corresponds to...
Partially supported by CNR Sp. Proj. on Informatic systems and Parallel comput. and CNR contr. 88.00...
In order to obtain fast and reliable simulators for nanoelectronic devices, both an algorithmic opti...
AbstractThis paper studies a multigrid method for the solution of the semiconductor device simulatio...
The work covers the electrophysical processes in the up-to-date semiconductor devices. The aim is to...
This paper presents a modelling and simulation study of advanced semiconductor devices. Different Te...
81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.A finite difference approximat...
Due to the complicated behaviour of power semiconductor devices, numerical modelling has become an i...
A new numerical method for semiconductor device simulation is presented. The additive decomposition ...